Mosfet Array N and P-Channel Complementary 30V 3.6A (Ta), 2.8A (Ta) 830mW Surface Mount TSOT-23-6
Mosfet Array N and P-Channel Complementary 30V 3.6A (Ta), 2.8A (Ta) 830mW Surface Mount TSOT-23-6
Mosfet Array N and P-Channel Complementary 30V 3.6A (Ta), 2.8A (Ta) 830mW Surface Mount TSOT-23-6
MOSFET N/P-CH 30V 3.6A TSOT23-6 Product overview: DMC3060LVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC3060LVT-7 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1376898-DMC3060LVT-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 39 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6
Base Product Number: DMC3060
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 830mW
Configuration: N and P-Channel Complementary
MOSFET BVDSS: 25V-30V TSOT26
MOSFET BVDSS: 25V-30V TSOT26
MOSFET N/P-CH 30V 3.6A TSOT23-6
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 31-DMC3060LVT-7TR-ND | 289-DMC3060LVT-7 | 1376898-DMC3060LVT-7 | DMC3060LVT-7 | 233-DMC3060LVT-7 | DMC3060LVT-7 |
| Product Name | FET, MOSFET Arrays | 30V 3.6A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET BVDSS: 25V-30V TSOT26 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | SOT3; SOT23 | SOT23; SOT-23-6 Thin, TSOT-23-6 | ||
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel Complementary | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| PD | 830 milliwatts | 1160 milliwatts |
