Manufacturer: Diodes Incorporated
Win Source Part Number: 014360-DMC3032LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: DMC3032LSD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.1A, 7A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 404.5pF @ 15V
Maximum Rds On at Id,Vgs: 32 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): Si4542DY; Si4542DY-E3; AP4503GM-HF; Si4542DY-T1-E3;
Introduction Date: May 05, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 30V 8.1A, 7A 2.5W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 8.1A, 7A 2.5W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 8.1A, 7A 2.5W Surface Mount 8-SO
MOSFET N/P-CH 30V 8.1A/7A 8SOP
MOSFET N/P-CH 30V 8.1A/7A 8SO
MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET
MOSFET, DUAL, N/P-CH, 30V, 8.1A ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 014360-DMC3032LSD-13 | DMC3032LSD-13DITR-ND | DMC3032LSD-13 | DMC3032LSD-13 | DMC3032LSD-13 | 28AK8382 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC3032LSD-13 | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual, N/p-Ch, 30V, 8.1A Rohs Compliant Diodes Inc. |
| Polarity | P-Channel | P-Channel; N and P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
