Mosfet Array N and P-Channel 30V 8.1A, 7A 2.5W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 8.1A, 7A 2.5W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 8.1A, 7A 2.5W Surface Mount 8-SO
MOSFET N/P-CH 30V 8.1A/7A 8SO Product overview: DMC3032LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.1A, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.1A, 7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC3032LSD-13 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V 8.1A/7A 8SOP
Manufacturer: Diodes Incorporated
Win Source Part Number: 014360-DMC3032LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: DMC3032LSD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.1A, 7A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 404.5pF @ 15V
Maximum Rds On at Id,Vgs: 32 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): Si4542DY; Si4542DY-E3; AP4503GM-HF; Si4542DY-T1-E3;
Introduction Date: May 05, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET
MOSFET, DUAL, N/P-CH, 30V, 8.1A ROHS COMPLIANT: YES
MOSFET N/P-CH 30V 8.1A/7A 8SO
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMC3032LSD-13DITR-ND | 289-DMC3032LSD-13 | DMC3032LSD-13 | 014360-DMC3032LSD-13 | DMC3032LSD-13 | 28AK8382 | DMC3032LSD-13 |
| Product Name | FET, MOSFET Arrays | 30V 8.1A 7A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC3032LSD-13 | MOSFET | Mosfet, Dual, N/p-Ch, 30V, 8.1A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | ||
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 2.5 milliwatts | 2500 milliwatts |
