DIODES Incorporated Mosfet, Np Channel, W Diode, 30V, So8; Transistor Polarity Diodes Inc. DMC3028LSD

Description
MOSFET, NP CHANNEL, W DIODE, 30V, SO8; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.028ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
Description
MOSFET, NP CHANNEL, W DIODE, 30V, SO8; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.028ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The DMC3028LSD is a complementary dual enhancement mode MOSFET in an SO-8 package, containing an N-channel and a P-channel device for high-efficiency power management applications. The N-channel has a drain-source voltage rating of 30V and an on-resistance of 28mΩ at VGS=10V, while the P-channel has a -30V rating and 25mΩ on-resistance at VGS=-10V. Both devices feature a continuous drain current of 5.7A and 5.9A respectively at 70°C, with a maximum pulsed drain current of 34A and 36A. The device is rated for operation from -55°C to +150°C and meets UL 94 V-0 flammability standards. It is RoHS compliant and uses a matte tin finished copper lead frame. Thermal resistance from junction to ambient is 70°C/W for one active die and 60°C/W for two active die. The package dimensions are 4.80-5.00mm in length and 3.80-4.00mm in width.

Datasheet Summary
Powered by GS/AI

The DMC3028LSD is a complementary dual enhancement mode MOSFET in an SO-8 package, containing an N-channel and a P-channel device for high-efficiency power management applications. The N-channel has a drain-source voltage rating of 30V and an on-resistance of 28mΩ at VGS=10V, while the P-channel has a -30V rating and 25mΩ on-resistance at VGS=-10V. Both devices feature a continuous drain current of 5.7A and 5.9A respectively at 70°C, with a maximum pulsed drain current of 34A and 36A. The device is rated for operation from -55°C to +150°C and meets UL 94 V-0 flammability standards. It is RoHS compliant and uses a matte tin finished copper lead frame. Thermal resistance from junction to ambient is 70°C/W for one active die and 60°C/W for two active die. The package dimensions are 4.80-5.00mm in length and 3.80-4.00mm in width.

Suppliers

Company
Product
Description
Supplier Links
Mosfet, Np Channel, W Diode, 30V, So8; Transistor Polarity Diodes Inc. - 65T8206 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Np Channel, W Diode, 30V, So8; Transistor Polarity Diodes Inc.
65T8206
Mosfet, Np Channel, W Diode, 30V, So8; Transistor Polarity Diodes Inc. 65T8206
MOSFET, NP CHANNEL, W DIODE, 30V, SO8; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.028ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, NP CHANNEL, W DIODE, 30V, SO8; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.028ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 65T8206
Product Name Mosfet, Np Channel, W Diode, 30V, So8; Transistor Polarity Diodes Inc.
Polarity P-Channel
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