MOSFET N/P-CH 30V TO252-4L
Manufacturer: Diodes Incorporated
Win Source Part Number: 014357-DMC3021LK4-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 2.7W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.4A, 6.8A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 17.4nC @ 10V
Max Input Capacitance: 751pF @ 10V
Maximum Rds On at Id,Vgs: 21 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
MOSFET N/P-CH 30V 9.4A TO252-4L Product overview: DMC3021LK4-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.4A, TO252, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC3021LK4-13 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V TO252-4L
MOSFET N/P-CH 30V 9.4A TO252-4L
MOSFET, DUAL, N/P-CH, 30V, 14A ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMC3021LK4-13 | 014357-DMC3021LK4-13 | DMC3021LK4-13DIDKR-ND | 289-DMC3021LK4-13 | 233-DMC3021LK4-13 | DMC3021LK4-13 | 28AK8374 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC3021LK4-13 | FET, MOSFET Arrays | 30V 9.4A TO252 MOSFET Transistor | MOSFET N/P-CH 30V TO252-4L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N/p-Ch, 30V, 14A Rohs Compliant Diodes Inc. |
| Polarity | P-Channel; N and P-Channel, Common Drain | P-Channel | N-Channel; P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||
| IDSS | 9400 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
