MOSFET N/P-CH 30V TO252-4L
Manufacturer: Diodes Incorporated
Win Source Part Number: 014357-DMC3021LK4-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 2.7W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.4A, 6.8A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 17.4nC @ 10V
Max Input Capacitance: 751pF @ 10V
Maximum Rds On at Id,Vgs: 21 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
MOSFET N/P-CH 30V 9.4A TO252-4L
MOSFET N/P-CH 30V TO252-4L
MOSFET, DUAL, N/P-CH, 30V, 14A ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMC3021LK4-13 | 014357-DMC3021LK4-13 | DMC3021LK4-13DIDKR-ND | DMC3021LK4-13 | 233-DMC3021LK4-13 | 28AK8374 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC3021LK4-13 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N/P-CH 30V TO252-4L | Mosfet, Dual, N/p-Ch, 30V, 14A Rohs Compliant Diodes Inc. |
| Polarity | P-Channel; N and P-Channel, Common Drain | P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| IDSS | 9400 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
