MOSFET N/P-CH 30V 9.4A TO252-4L Product overview: DMC3021LK4-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.4A, TO252, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC3021LK4-13 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V TO252-4L
Manufacturer: Diodes Incorporated
Win Source Part Number: 014357-DMC3021LK4-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 2.7W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.4A, 6.8A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 17.4nC @ 10V
Max Input Capacitance: 751pF @ 10V
Maximum Rds On at Id,Vgs: 21 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
Mosfet Array N and P-Channel, Common Drain 30V 9.4A, 6.8A 2.7W Surface Mount TO-252-4L
MOSFET, DUAL, N/P-CH, 30V, 14A ROHS COMPLIANT: YES
MOSFET N/P-CH 30V TO252-4L
MOSFET N/P-CH 30V 9.4A TO252-4L
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-DMC3021LK4-13 | DMC3021LK4-13 | 014357-DMC3021LK4-13 | DMC3021LK4-13DIDKR-ND | 28AK8374 | 233-DMC3021LK4-13 | DMC3021LK4-13 |
| Product Name | 30V 9.4A TO252 MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC3021LK4-13 | FET, MOSFET Arrays | Mosfet, Dual, N/p-Ch, 30V, 14A Rohs Compliant Diodes Inc. | MOSFET N/P-CH 30V TO252-4L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel, Common Drain | P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||
| Transconductance | 0.0085 kS | ||||||
| PD | 2.75 milliwatts | 2700 milliwatts | 2700 milliwatts |
