MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Mosfet Array N and P-Channel 30V 8.2A, 6.2A 1.2W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 8.2A, 6.2A 1.2W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 8.2A, 6.2A 1.2W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 140081-DMC3016LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.2A, 6.2A
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 25.1nC @ 10V
Max Input Capacitance: 1415pF @ 15V
Maximum Rds On at Id,Vgs: 16 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
MOSFET, DUAL, N/P-CH, 30V, 8.2A ROHS COMPLIANT: YES
MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
MOSFET N/P-CH 30V 8.2A/6.2A 8SO
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMC3016LSD-13 | DMC3016LSD-13DICT-ND | 140081-DMC3016LSD-13 | DMC3016LSD-13 | 28AK8373 | 233-DMC3016LSD-13 | DMC3016LSD-13 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC3016LSD-13 | MOSFET | Mosfet, Dual, N/p-Ch, 30V, 8.2A Rohs Compliant Diodes Inc. | MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 8200 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
