Mosfet Array N and P-Channel 30V 8.2A, 6.2A 1.2W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 8.2A, 6.2A 1.2W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 8.2A, 6.2A 1.2W Surface Mount 8-SO
MOSFET N/P-CH 30V 8.2A/6.2A 8SO Product overview: DMC3016LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.2A, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.2A, 6.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC3016LSD-13 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 140081-DMC3016LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.2A, 6.2A
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 25.1nC @ 10V
Max Input Capacitance: 1415pF @ 15V
Maximum Rds On at Id,Vgs: 16 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
MOSFET, DUAL, N/P-CH, 30V, 8.2A ROHS COMPLIANT: YES
MOSFET N/P-CH 30V 8.2A/6.2A 8SO
MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMC3016LSD-13DICT-ND | 289-DMC3016LSD-13 | DMC3016LSD-13 | 140081-DMC3016LSD-13 | 233-DMC3016LSD-13 | 28AK8373 | DMC3016LSD-13 | DMC3016LSD-13 |
| Product Name | FET, MOSFET Arrays | 30V 8.2A 6.2A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC3016LSD-13 | MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC | Mosfet, Dual, N/p-Ch, 30V, 8.2A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | |||
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| PD | 1.2 milliwatts | 1200 milliwatts | 1200 milliwatts |
