The MOSFET, N & P-Ch, 30V, 21A, PowerDI 3333 is a complementary pair enhancement mode MOSFET suitable for high-efficiency power management applications. The N-channel MOSFET features a maximum drain-source voltage (V(BR)DSS) of 30V and a continuous drain current (ID) of 21A at a case temperature of +25¬8C. It exhibits a low on-resistance (RDS(ON)) of 12m,Ѷ at a gate-source voltage (VGS) of 10V and 17m,Ѷ at 4.5V, making it effective for minimizing power loss. The P-channel counterpart has a maximum drain-source voltage of -30V and a continuous drain current of -15A. It has an on-resistance of 25m,Ѷ at VGS of -10V. Both devices are designed with low input capacitance and fast switching speeds, enhancing their performance in power management and analog switch applications. The product is fully RoHS compliant, lead-free, and halogen-free, aligning with environmental standards. It is packaged in a PowerDI3333-8 case, which is compact and suitable for various PCB layouts. The device is rated for a maximum power dissipation of 0.9W and operates within a temperature range of -55¬8C to +150¬8C. This MOSFET is a viable option for engineers seeking reliable and efficient components for their designs.
MOSFET BVDSS: 31V 40V POWERDI333
Mosfet Array N and P-Channel Complementary 30V 21A (Tc), 15A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8
Mosfet Array N and P-Channel Complementary 30V 21A (Tc), 15A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8
Mosfet Array N and P-Channel Complementary 30V 21A (Tc), 15A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8
Win Source Part Number: 960316-DMC3016LDV-7
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power - Max: 900mW (Ta)
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMC3016LDV-7DMC3016L
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: DMC3016LDV-7DICT,DMC
Base Product Number: DMC3016
MOSFET, N & P-CH, 30V, 21A, POWERDI 3333; Transistor Polarity:N and P Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; RoHS Compliant: Yes
MOSFET N/P-CH 30V 21A PWRDI3333
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMC3016LDV-7 | 31-DMC3016LDV-7DKR-ND | 960316-DMC3016LDV-7 | 12AC0696 | DMC3016LDV-7 | DMC3016LDV-7 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Mosfet, N & P-Ch, 30V, 21A, Powerdi 3333; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; N and P-Channel Complementary | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 21000 milliamps | 21000 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
