MOSFET N/P-CH 20V SOT963
Manufacturer: Diodes Incorporated
Win Source Part Number: 080556-DMC2990UDJ-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-963
Maximum Power Dissipation: 350mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 450mA, 310mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 27.6pF @ 15V
Maximum Rds On at Id,Vgs: 990 mOhm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
Mosfet Array N and P-Channel 20V 450mA, 310mA 350mW Surface Mount SOT-963
Mosfet Array N and P-Channel 20V 450mA, 310mA 350mW Surface Mount SOT-963
Mosfet Array N and P-Channel 20V 450mA, 310mA 350mW Surface Mount SOT-963
MOSFET N/P-CH 20V 0.45A SOT963 Product overview: DMC2990UDJ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.45A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC2990UDJ-7 can be used for catalog matching and distributor lookup.
20V 990mΩ@100mA,4.5V 350mW 1V@250uA 1PCSN-Channel&1PCSP-
MOSFET N/P-CH 20V 0.45A SOT963
DUAL MOSFET, COMPLEMENT/20V/0.45A
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMC2990UDJ-7 | 080556-DMC2990UDJ-7 | DMC2990UDJ-7DITR-ND | 289-DMC2990UDJ-7 | DMC2990UDJ-7 | DMC2990UDJ-7 | DMC2990UDJ-7 | 88AH6195 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC2990UDJ-7 | FET, MOSFET Arrays | 20V 0.45A MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, Complement/20V/0.45A/sot963 Rohs Compliant Diodes Inc. |
| Polarity | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 450 milliamps | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
