DIODES Incorporated FET, MOSFET Arrays DMC2710UV-7

Description
MOSFET BVDSS: 8V-24V SOT563
Request a Quote Datasheet
Description
MOSFET BVDSS: 8V-24V SOT563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMC2710UV-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMC2710UV-7
FET, MOSFET Arrays DMC2710UV-7
MOSFET BVDSS: 8V-24V SOT563

MOSFET BVDSS: 8V-24V SOT563

Supplier's Site Datasheet
FET, MOSFET Arrays - 31-DMC2710UV-7DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMC2710UV-7DKR-ND
FET, MOSFET Arrays 31-DMC2710UV-7DKR-ND
MOSFET N/P-CH 20V 1.1A SOT563

MOSFET N/P-CH 20V 1.1A SOT563

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMC2710UV-7CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMC2710UV-7CT-ND
FET, MOSFET Arrays 31-DMC2710UV-7CT-ND
MOSFET N/P-CH 20V 1.1A SOT563

MOSFET N/P-CH 20V 1.1A SOT563

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMC2710UV-7TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMC2710UV-7TR-ND
FET, MOSFET Arrays 31-DMC2710UV-7TR-ND
Mosfet Array N and P-Channel Complementary 20V 1.1A (Ta), 800mA (Ta) 460mW (Ta) Surface Mount SOT-563

Mosfet Array N and P-Channel Complementary 20V 1.1A (Ta), 800mA (Ta) 460mW (Ta) Surface Mount SOT-563

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMC2710UV-7 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMC2710UV-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMC2710UV-7
MOSFET N/P-CH 20V 1.1A SOT563

MOSFET N/P-CH 20V 1.1A SOT563

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number DMC2710UV-7 31-DMC2710UV-7DKR-ND DMC2710UV-7
Product Name FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; N and P-Channel Complementary
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts
IDSS 1100 milliamps
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