The DMC2058UNS-13 is a complementary pair enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power-management applications such as load switches. It features an N-channel MOSFET with a 20 V drain-source voltage and 35 mΩ on-resistance at 10 V gate voltage, and a P-channel MOSFET with a -20 V drain-source voltage and 120 mΩ on-resistance at -4.5 V gate voltage. The device supports continuous drain currents of 5.6 A and -3.1 A respectively, with a total power dissipation of 1.0 W on a single-sided PCB. It meets AEC-Q100/101/104/200 qualifications, is RoHS compliant, and has a thermal resistance junction-to-ambient of 121 °C/W. The package is molded plastic with UL 94 V-0 flammability rating and is suitable for automotive applications. The part is packed in 3000-unit tape and reel formats.
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The DMC2058UNS-13 is a complementary pair enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power-management applications such as load switches. It features an N-channel MOSFET with a 20 V drain-source voltage and 35 mΩ on-resistance at 10 V gate voltage, and a P-channel MOSFET with a -20 V drain-source voltage and 120 mΩ on-resistance at -4.5 V gate voltage. The device supports continuous drain currents of 5.6 A and -3.1 A respectively, with a total power dissipation of 1.0 W on a single-sided PCB. It meets AEC-Q100/101/104/200 qualifications, is RoHS compliant, and has a thermal resistance junction-to-ambient of 121 °C/W. The package is molded plastic with UL 94 V-0 flammability rating and is suitable for automotive applications. The part is packed in 3000-unit tape and reel formats.
