DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays DMC2053UFDBQ-7

Description
Win Source Part Number: 960962-DMC2053UFDBQ- 7 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power - Max: 820mW (Ta) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B) Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 72 pct. HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Other Names: 31-DMC2053UFDBQ-7TR
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Description
Win Source Part Number: 960962-DMC2053UFDBQ- 7 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power - Max: 820mW (Ta) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B) Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 72 pct. HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Other Names: 31-DMC2053UFDBQ-7TR
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 960962-DMC2053UFDBQ-7 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
960962-DMC2053UFDBQ-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 960962-DMC2053UFDBQ-7
Win Source Part Number: 960962-DMC2053UFDBQ- 7 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power - Max: 820mW (Ta) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B) Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 72 pct. HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Other Names: 31-DMC2053UFDBQ-7TR

Win Source Part Number: 960962-DMC2053UFDBQ-7
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 820mW (Ta)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: 31-DMC2053UFDBQ-7TR

Buy Now Datasheet
FET, MOSFET Arrays - DMC2053UFDBQ-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMC2053UFDBQ-7
FET, MOSFET Arrays DMC2053UFDBQ-7
MOSFET BVDSS: 8V~24V U-DFN2020-6

MOSFET BVDSS: 8V~24V U-DFN2020-6

Supplier's Site Datasheet
FET, MOSFET Arrays - 31-DMC2053UFDBQ-7TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMC2053UFDBQ-7TR-ND
FET, MOSFET Arrays 31-DMC2053UFDBQ-7TR-ND
MOSFET N/P-CH 20V 4.6A 6UDFN

MOSFET N/P-CH 20V 4.6A 6UDFN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMC2053UFDBQ-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMC2053UFDBQ-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMC2053UFDBQ-7
MOSFET N/P-CH 20V 4.6A 6UDFN

MOSFET N/P-CH 20V 4.6A 6UDFN

Supplier's Site
Transistor Mosfet Dual, 20V, U-Dfn2020-6 Rohs Compliant Diodes Inc. - 76AJ4254 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Mosfet Dual, 20V, U-Dfn2020-6 Rohs Compliant Diodes Inc.
76AJ4254
Transistor Mosfet Dual, 20V, U-Dfn2020-6 Rohs Compliant Diodes Inc. 76AJ4254
TRANSISTOR MOSFET DUAL, 20V, U-DFN2020-6 ROHS COMPLIANT: YES

TRANSISTOR MOSFET DUAL, 20V, U-DFN2020-6 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 960962-DMC2053UFDBQ-7 DMC2053UFDBQ-7 31-DMC2053UFDBQ-7TR-ND DMC2053UFDBQ-7 76AJ4254
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Mosfet Dual, 20V, U-Dfn2020-6 Rohs Compliant Diodes Inc.
Polarity P-Channel P-Channel; N and P-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 6-UDFN Exposed Pad 6-UDFN Exposed Pad Automotive TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
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