MOSFET N/P-CH 20V 7.8A/6.3A 8SO Product overview: DMC2020USD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.8A, 6.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.8A, 6.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC2020USD-13 can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 20V 7.8A, 6.3A 1.8W Surface Mount 8-SO
Mosfet Array N and P-Channel 20V 7.8A, 6.3A 1.8W Surface Mount 8-SO
Mosfet Array N and P-Channel 20V 7.8A, 6.3A 1.8W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 014354-DMC2020USD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.8A, 6.3A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 11.6nC @ 4.5V
Max Input Capacitance: 1149pF @ 10V
Maximum Rds On at Id,Vgs: 20 mOhm @ 7A, 4.5V
Alternative Parts (Cross-Reference): SI4511DY-T1-E3; SI4511DY-T1-GE3; Si4511DY-E3;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
MOSFET N/P-CH 20V 7.8A/6.3A 8SO
MOSFET, DUAL, N/P-CH, 20V, 7.8A ROHS COMPLIANT: YES
MOSFET N/P-CH 20V 7.8A/6.3A 8SO
MOSFET N/P-CH 20V 7.8A/6.3A 8SO
20V 20mΩ@7A,4.5V 1.8W 1.5V@250uA 1PCSN-Channel&1PCSP-
MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMC2020USD-13 | DMC2020USD-13DIDKR-ND | 014354-DMC2020USD-13 | DMC2020USD-13 | 28AK8361 | DMC2020USD-13 | 233-DMC2020USD-13 | DMC2020USD-13 | DMC2020USD-13 |
| Product Name | 20V 7.8A 6.3A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC2020USD-13 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N/p-Ch, 20V, 7.8A Rohs Compliant Diodes Inc. | FET, MOSFET Arrays | MOSFET N/P-CH 20V 7.8A/6.3A 8SO | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| PD | 1.8 milliwatts | 1800 milliwatts | 1800 milliwatts | 1800 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
