DIODES Incorporated FETs - Arrays - DMC1229UFDB-13 DMC1229UFDB-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 804893-DMC1229UFDB-1 3 Packaging: Reel Mounting Style: SMD FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Power - Max: 1.4W Supplier Device Package: U-DFN2020-6 (Type B) Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 6-UDFN Exposed Pad Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 10,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 29mOhm at 5A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 19.6nC at 8V Input Capacitance (Ciss) (Maximum) at Vds: 914pF at 6V Current - Continuous Drain (Id) at 25°C: 5.6A, 3.8A Vgs(th) (Maximum) at Id: 1V at 250μA
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 804893-DMC1229UFDB-1 3 Packaging: Reel Mounting Style: SMD FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Power - Max: 1.4W Supplier Device Package: U-DFN2020-6 (Type B) Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 6-UDFN Exposed Pad Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 10,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 29mOhm at 5A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 19.6nC at 8V Input Capacitance (Ciss) (Maximum) at Vds: 914pF at 6V Current - Continuous Drain (Id) at 25°C: 5.6A, 3.8A Vgs(th) (Maximum) at Id: 1V at 250μA
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Suppliers

Company
Product
Description
Supplier Links
FETs - Arrays - DMC1229UFDB-13 - 804893-DMC1229UFDB-13 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - DMC1229UFDB-13
804893-DMC1229UFDB-13
FETs - Arrays - DMC1229UFDB-13 804893-DMC1229UFDB-13
Manufacturer: Diodes Incorporated Win Source Part Number: 804893-DMC1229UFDB-1 3 Packaging: Reel Mounting Style: SMD FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Power - Max: 1.4W Supplier Device Package: U-DFN2020-6 (Type B) Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 6-UDFN Exposed Pad Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 10,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 29mOhm at 5A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 19.6nC at 8V Input Capacitance (Ciss) (Maximum) at Vds: 914pF at 6V Current - Continuous Drain (Id) at 25°C: 5.6A, 3.8A Vgs(th) (Maximum) at Id: 1V at 250μA

Manufacturer: Diodes Incorporated
Win Source Part Number: 804893-DMC1229UFDB-13
Packaging: Reel
Mounting Style: SMD
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
Supplier Device Package: U-DFN2020-6 (Type B)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-UDFN Exposed Pad
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 29mOhm at 5A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 19.6nC at 8V
Input Capacitance (Ciss) (Maximum) at Vds: 914pF at 6V
Current - Continuous Drain (Id) at 25°C: 5.6A, 3.8A
Vgs(th) (Maximum) at Id: 1V at 250μA

Buy Now
FET, MOSFET Arrays - 31-DMC1229UFDB-13DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMC1229UFDB-13DKR-ND
FET, MOSFET Arrays 31-DMC1229UFDB-13DKR-ND
MOSFET N/P-CH 12V 5.6A 6UDFN

MOSFET N/P-CH 12V 5.6A 6UDFN

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FET, MOSFET Arrays - 31-DMC1229UFDB-13CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMC1229UFDB-13CT-ND
FET, MOSFET Arrays 31-DMC1229UFDB-13CT-ND
MOSFET N/P-CH 12V 5.6A 6UDFN

MOSFET N/P-CH 12V 5.6A 6UDFN

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FET, MOSFET Arrays - 31-DMC1229UFDB-13TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMC1229UFDB-13TR-ND
FET, MOSFET Arrays 31-DMC1229UFDB-13TR-ND
Mosfet Array N and P-Channel 12V 5.6A, 3.8A 1.4W Surface Mount U-DFN2020-6 (Type B)

Mosfet Array N and P-Channel 12V 5.6A, 3.8A 1.4W Surface Mount U-DFN2020-6 (Type B)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMC1229UFDB-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMC1229UFDB-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMC1229UFDB-13
MOSFET N/P-CH 12V 5.6A 6UDFN

MOSFET N/P-CH 12V 5.6A 6UDFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Comp ENH Mode FET 12V Vdss 8V VGss

MOSFET Comp ENH Mode FET 12V Vdss 8V VGss

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 804893-DMC1229UFDB-13 31-DMC1229UFDB-13DKR-ND DMC1229UFDB-13 DMC1229UFDB-13
Product Name FETs - Arrays - DMC1229UFDB-13 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel
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