DIODES Incorporated FET, MOSFET Arrays DMC1229UFDB-13

MOSFET N/P-CH 12V 5.6A 6UDFN

MOSFET N/P-CH 12V 5.6A 6UDFN

Mosfet Array N and P-Channel 12V 5.6A, 3.8A 1.4W Surface Mount U-DFN2020-6 (Type B)

MOSFET N/P-CH 12V 5.6A 6UDFN Product overview: DMC1229UFDB-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 5.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC1229UFDB-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 804893-DMC1229UFDB-13
Packaging: Reel
Mounting Style: SMD
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
Supplier Device Package: U-DFN2020-6 (Type B)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-UDFN Exposed Pad
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 29mOhm at 5A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 19.6nC at 8V
Input Capacitance (Ciss) (Maximum) at Vds: 914pF at 6V
Current - Continuous Drain (Id) at 25°C: 5.6A, 3.8A
Vgs(th) (Maximum) at Id: 1V at 250μA