Mosfet Array N and P-Channel 12V, 20V 6A, 3.4A 1.36W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array N and P-Channel 12V, 20V 6A, 3.4A 1.36W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array N and P-Channel 12V, 20V 6A, 3.4A 1.36W Surface Mount U-DFN2020-6 (Type B)
Manufacturer: Diodes Incorporated
Win Source Part Number: 1072883-DMC1028UFDB-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type B)
Maximum Power Dissipation: 1.36W
Drain-Source Breakdown Voltage: 12V, 20V
Continuous Drain Current at 25°C: 6A, 3.4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 18.5nC @ 8V
Max Input Capacitance: 787pF @ 6V
Maximum Rds On at Id,Vgs: 25 mOhm @ 5.2A, 4.5V
Alternative Parts (Cross-Reference): FDMA1032CZ; DMC1028UFDB-13; uPA2690T1R-E2-AX;
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
MOSFET N/P-CH 12V/20V 6UDFN
MOSFET N-Ch 12VDss 8Vgss P-Ch 8Vdss 8Vgss
MOSFET N/P-CH 12V 6A/3.4A 6UDFN
MOSFET, DUAL, N/P-CH, 12V, 6A ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMC1028UFDB-7DIDKR-ND | 1072883-DMC1028UFDB-7 | DMC1028UFDB-7 | DMC1028UFDB-7 | DMC1028UFDB-7 | 28AK8355 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1028UFDB-7 | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N/p-Ch, 12V, 6A Rohs Compliant Diodes Inc. |
| Package Type | 6-UDFN Exposed Pad | SOT3; U-DFN2020-6 (Type B) | 6-UDFN Exposed Pad | TO-3 | ||
| Polarity | P-Channel | P-Channel; N and P-Channel | ||||
| V(BR)DSS | 12 to 20 volts | 12 to 20 volts | ||||
| PD | 1360 milliwatts |
