MOSFET N/P-CH 12V 6A/3.4A 6UDFN Product overview: DMC1028UFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6A, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 6A, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC1028UFDB-7 can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 12V, 20V 6A, 3.4A 1.36W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array N and P-Channel 12V, 20V 6A, 3.4A 1.36W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array N and P-Channel 12V, 20V 6A, 3.4A 1.36W Surface Mount U-DFN2020-6 (Type B)
Manufacturer: Diodes Incorporated
Win Source Part Number: 1072883-DMC1028UFDB-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type B)
Maximum Power Dissipation: 1.36W
Drain-Source Breakdown Voltage: 12V, 20V
Continuous Drain Current at 25°C: 6A, 3.4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 18.5nC @ 8V
Max Input Capacitance: 787pF @ 6V
Maximum Rds On at Id,Vgs: 25 mOhm @ 5.2A, 4.5V
Alternative Parts (Cross-Reference): FDMA1032CZ; DMC1028UFDB-13; uPA2690T1R-E2-AX;
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
MOSFET N/P-CH 12V/20V 6UDFN
MOSFET, DUAL, N/P-CH, 12V, 6A ROHS COMPLIANT: YES
MOSFET N/P-CH 12V 6A/3.4A 6UDFN
MOSFET N-Ch 12VDss 8Vgss P-Ch 8Vdss 8Vgss
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMC1028UFDB-7 | DMC1028UFDB-7DITR-ND | 1072883-DMC1028UFDB-7 | DMC1028UFDB-7 | 28AK8355 | DMC1028UFDB-7 | DMC1028UFDB-7 |
| Product Name | 12V 6A 3.4A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1028UFDB-7 | FET, MOSFET Arrays | Mosfet, Dual, N/p-Ch, 12V, 6A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 12 volts | 12 to 20 volts | 12 to 20 volts | ||||
| PD | 1.36 milliwatts | 1360 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
