Manufacturer: Diodes Incorporated
Win Source Part Number: 868882-DMC1018UPD-13
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array N and P-Channel 12V, 20V 9.5A, 6.9A 2.3W Surface Mount PowerDI5060-8
Package: Reel - TR
Package: 8-PowerTDFN
Mounting: Surface Mount
Family Name: DMC1018
Categories: Discrete Semiconductor Products
Case / Package: PowerDI5060-8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: -DMC1018UPD-13DIDKR,
MOSFET N/P-CH 12V 9.5A PWRDI50 Product overview: DMC1018UPD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC1018UPD-13 can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 12V, 20V 9.5A, 6.9A 2.3W Surface Mount PowerDI5060-8
Mosfet Array N and P-Channel 12V, 20V 9.5A, 6.9A 2.3W Surface Mount PowerDI5060-8
Mosfet Array N and P-Channel 12V, 20V 9.5A, 6.9A 2.3W Surface Mount PowerDI5060-8
MOSFET N/P-CH 12V POWERDI5060
MOSFET N/P-CH 12V 9.5A PWRDI50
MOSFET N/P-CH 12V POWERDI5060
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 868882-DMC1018UPD-13 | 289-DMC1018UPD-13 | 31-DMC1018UPD-13TR-ND | 233-DMC1018UPD-13 | DMC1018UPD-13 | DMC1018UPD-13 | DMC1018UPD-13 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1018UPD-13 | 12V 9.5A MOSFET Transistor | FET, MOSFET Arrays | MOSFET N/P-CH 12V POWERDI5060 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; PowerDI5060-8 | Tape & Reel (TR) | 8-PowerTDFN | Automotive | 8-PowerTDFN | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 12 volts | 12 to 20 volts |
