Manufacturer: Diodes Incorporated
Win Source Part Number: 137282-DMC1017UPD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI5060-8
Maximum Power Dissipation: 2.3W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 9.5A, 6.9A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 35.4nC @ 10V
Max Input Capacitance: 1787pF @ 6V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 12V 13A PWRDI50 Product overview: DMC1017UPD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 13A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC1017UPD-13 can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel Complementary 12V 13A (Ta), 9.4A (Ta) 2.3W Surface Mount PowerDI5060-8
MOSFET N/P-CH 12V 13A PWRDI50
MOSFET Enh FET 12Vdss 8Vgss 20V Complementary
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 137282-DMC1017UPD-13 | 289-DMC1017UPD-13 | DMC1017UPD-13-ND | DMC1017UPD-13 | 233-DMC1017UPD-13 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1017UPD-13 | 12V 13A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET Enh FET 12Vdss 8Vgss 20V Complementary |
| Polarity | P-Channel | ||||
| V(BR)DSS | 12 volts | ||||
| PD | 2300 milliwatts | 2300 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
