DIODES Incorporated FET, MOSFET Arrays DMC1017UPD-13

Description
Mosfet Array N and P-Channel Complementary 12V 13A (Ta), 9.4A (Ta) 2.3W Surface Mount PowerDI5060-8
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel Complementary 12V 13A (Ta), 9.4A (Ta) 2.3W Surface Mount PowerDI5060-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMC1017UPD-13-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMC1017UPD-13-ND
FET, MOSFET Arrays DMC1017UPD-13-ND
Mosfet Array N and P-Channel Complementary 12V 13A (Ta), 9.4A (Ta) 2.3W Surface Mount PowerDI5060-8

Mosfet Array N and P-Channel Complementary 12V 13A (Ta), 9.4A (Ta) 2.3W Surface Mount PowerDI5060-8

Buy Now Datasheet
Singapore
12V 13A MOSFET Transistor
289-DMC1017UPD-13
12V 13A MOSFET Transistor 289-DMC1017UPD-13
MOSFET N/P-CH 12V 13A PWRDI50 Product overview: DMC1017UPD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 13A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC1017UPD-13 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 12V 13A PWRDI50 Product overview: DMC1017UPD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 13A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC1017UPD-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1017UPD-13 - 137282-DMC1017UPD-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1017UPD-13
137282-DMC1017UPD-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1017UPD-13 137282-DMC1017UPD-13
Manufacturer: Diodes Incorporated Win Source Part Number: 137282-DMC1017UPD-13 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI5060-8 Maximum Power Dissipation: 2.3W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 9.5A, 6.9A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 35.4nC @ 10V Max Input Capacitance: 1787pF @ 6V Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 137282-DMC1017UPD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI5060-8
Maximum Power Dissipation: 2.3W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 9.5A, 6.9A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 35.4nC @ 10V
Max Input Capacitance: 1787pF @ 6V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET Enh FET 12Vdss 8Vgss 20V Complementary - 233-DMC1017UPD-13 - Utmel Electronic Limited
Hong Kong, China
MOSFET Enh FET 12Vdss 8Vgss 20V Complementary
233-DMC1017UPD-13
MOSFET Enh FET 12Vdss 8Vgss 20V Complementary 233-DMC1017UPD-13
MOSFET Enh FET 12Vdss 8Vgss 20V Complementary

MOSFET Enh FET 12Vdss 8Vgss 20V Complementary

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMC1017UPD-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMC1017UPD-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMC1017UPD-13
MOSFET N/P-CH 12V 13A PWRDI50

MOSFET N/P-CH 12V 13A PWRDI50

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMC1017UPD-13-ND 289-DMC1017UPD-13 137282-DMC1017UPD-13 233-DMC1017UPD-13 DMC1017UPD-13
Product Name FET, MOSFET Arrays 12V 13A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1017UPD-13 MOSFET Enh FET 12Vdss 8Vgss 20V Complementary Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-PowerTDFN Tape & Reel (TR) SOT3; PowerDI5060-8 Automotive
Transistor Grade / Operating Range Automotive
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT)
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