Manufacturer: Diodes Incorporated
Win Source Part Number: 1072882-DMC1016UPD-1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI5060-8
Maximum Power Dissipation: 2.3W
Drain-Source Breakdown Voltage: 12V, 20V
Continuous Drain Current at 25°C: 9.5A, 8.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 32nC @ 8V
Max Input Capacitance: 1454pF @ 6V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 12V, 20V 9.5A, 8.7A 2.3W Surface Mount PowerDI5060-8
Mosfet Array N and P-Channel 12V, 20V 9.5A, 8.7A 2.3W Surface Mount PowerDI5060-8
Mosfet Array N and P-Channel 12V, 20V 9.5A, 8.7A 2.3W Surface Mount PowerDI5060-8
MOSFET N/P-CH 12V 9.5A PWRDI50 Product overview: DMC1016UPD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC1016UPD-13 can be used for catalog matching and distributor lookup.
MOSFET 8V 24V POWERDI5060-8
MOSFET N/P-CH 12V 9.5A PWRDI50
MOSFET 8V 24V POWERDI5060-8
MOSFET, DUAL, N/P-CH, 12V, 9.5A ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1072882-DMC1016UPD-13 | DMC1016UPD-13DIDKR-ND | 289-DMC1016UPD-13 | DMC1016UPD-13 | DMC1016UPD-13 | DMC1016UPD-13 | 233-DMC1016UPD-13 | 28AK8354 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1016UPD-13 | FET, MOSFET Arrays | 12V 9.5A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET 8V 24V POWERDI5060-8 | Mosfet, Dual, N/p-Ch, 12V, 9.5A Rohs Compliant Diodes Inc. |
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel | |||||
| V(BR)DSS | 12 to 20 volts | 12 volts | 12 to 20 volts | |||||
| PD | 2300 milliwatts | 2.3 milliwatts | 2300 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; PowerDI5060-8 | 8-PowerTDFN | Tape & Reel (TR) | 8-PowerTDFN | TO-3 |
