MOSFET 8V 24V POWERDI5060-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 1072882-DMC1016UPD-1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI5060-8
Maximum Power Dissipation: 2.3W
Drain-Source Breakdown Voltage: 12V, 20V
Continuous Drain Current at 25°C: 9.5A, 8.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 32nC @ 8V
Max Input Capacitance: 1454pF @ 6V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 12V, 20V 9.5A, 8.7A 2.3W Surface Mount PowerDI5060-8
Mosfet Array N and P-Channel 12V, 20V 9.5A, 8.7A 2.3W Surface Mount PowerDI5060-8
Mosfet Array N and P-Channel 12V, 20V 9.5A, 8.7A 2.3W Surface Mount PowerDI5060-8
MOSFET, DUAL, N/P-CH, 12V, 9.5A ROHS COMPLIANT: YES
MOSFET N/P-CH 12V 9.5A PWRDI50
MOSFET 8V 24V POWERDI5060-8
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMC1016UPD-13 | 1072882-DMC1016UPD-13 | DMC1016UPD-13DICT-ND | 28AK8354 | DMC1016UPD-13 | 233-DMC1016UPD-13 | DMC1016UPD-13 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC1016UPD-13 | FET, MOSFET Arrays | Mosfet, Dual, N/p-Ch, 12V, 9.5A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 8V 24V POWERDI5060-8 | MOSFET |
| Polarity | P-Channel; N and P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 12 to 20 volts | 12 to 20 volts | |||||
| IDSS | 9500 milliamps |
