DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD142JU-7 DDTD142JU-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080397-DDTD142JU-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-323 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 50mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080397-DDTD142JU-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-323 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 50mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD142JU-7 - 080397-DDTD142JU-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD142JU-7
080397-DDTD142JU-7
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD142JU-7 080397-DDTD142JU-7
Manufacturer: Diodes Incorporated Win Source Part Number: 080397-DDTD142JU-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-323 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 50mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 080397-DDTD142JU-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 470
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-323
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 56 @ 50mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
200MW Bipolar Transistor
292-DDTD142JU-7
200MW Bipolar Transistor 292-DDTD142JU-7
TRANS PREBIAS NPN 200MW SOT323 Product overview: DDTD142JU-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DDTD142JU-7 can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 200MW SOT323 Product overview: DDTD142JU-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DDTD142JU-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANS PREBIAS NPN 200MW SOT323 - 233-DDTD142JU-7 - Utmel Electronic Limited
Hong Kong, China
TRANS PREBIAS NPN 200MW SOT323
233-DDTD142JU-7
TRANS PREBIAS NPN 200MW SOT323 233-DDTD142JU-7
TRANS PREBIAS NPN 200MW SOT323

TRANS PREBIAS NPN 200MW SOT323

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DDTD142JU-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DDTD142JU-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DDTD142JU-7
TRANS PREBIAS NPN 200MW SOT323

TRANS PREBIAS NPN 200MW SOT323

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 080397-DDTD142JU-7 292-DDTD142JU-7 233-DDTD142JU-7 DDTD142JU-7
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD142JU-7 200MW Bipolar Transistor TRANS PREBIAS NPN 200MW SOT323 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased NPN; NPN
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