DIODES Incorporated Bipolar Transistors - Pre-Biased DDTD133HU-7-F

NPN pre-biased transistor in SOT-323 package, designed for surface mount applications with built-in biasing resistors R1=3.3kΩ and R2=10kΩ. Maximum collector current is 500 mA, power dissipation is 200 mW, and supply voltage is 50 V. Operating and storage junction temperature ranges from -55°C to +150°C. The device meets UL 94 V-0 flammability rating, is RoHS compliant, and has moisture sensitivity level 1 per J-STD-020C. Terminal connections are solderable per MIL-STD-202, Method 208.