DIODES Incorporated 200MW Bipolar Transistor DDTD123TU-7-F

Description
TRANS PREBIAS NPN 200MW SOT323 Product overview: DDTD123TU-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DDTD123TU-7-F can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS NPN 200MW SOT323 Product overview: DDTD123TU-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DDTD123TU-7-F can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
200MW Bipolar Transistor
293-DDTD123TU-7-F
200MW Bipolar Transistor 293-DDTD123TU-7-F
TRANS PREBIAS NPN 200MW SOT323 Product overview: DDTD123TU-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DDTD123TU-7-F can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 200MW SOT323 Product overview: DDTD123TU-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DDTD123TU-7-F can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD123TU-7-F - 1032782-DDTD123TU-7-F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD123TU-7-F
1032782-DDTD123TU-7-F
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD123TU-7-F 1032782-DDTD123TU-7-F
Manufacturer: Diodes Incorporated Win Source Part Number: 1032782-DDTD123TU-7- F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-323 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 100 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1032782-DDTD123TU-7-F
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-323
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
DDTD123TU-7-F
Bipolar Transistors - Pre-Biased DDTD123TU-7-F
Bipolar Transistors - Pre-Biased 200MW 2.2K

Bipolar Transistors - Pre-Biased 200MW 2.2K

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 293-DDTD123TU-7-F 1032782-DDTD123TU-7-F DDTD123TU-7-F
Product Name 200MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTD123TU-7-F Bipolar Transistors - Pre-Biased
Polarity NPN NPN; NPN - Pre-Biased
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