DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTC115EE-7 DDTC115EE-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1166997-DDTC115EE-7 Packaging: Reel - TR Package: SOT-523 Mounting: SMD Power - Max: 150mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 250MHz Family Name: DDTC115EE Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k Categories: Discrete Semiconductor Products Manufacturer Homepage: www.diodes.com RoHS State: Request Verification Manufacturer Package: SOT-523 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 250μA, 5mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 5mA, 5V Alternative Parts (Cross-Reference): DTC115EEFRATL; RT1N151U; DTC115EE; Introduction Date: November 14, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1166997-DDTC115EE-7 Packaging: Reel - TR Package: SOT-523 Mounting: SMD Power - Max: 150mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 250MHz Family Name: DDTC115EE Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k Categories: Discrete Semiconductor Products Manufacturer Homepage: www.diodes.com RoHS State: Request Verification Manufacturer Package: SOT-523 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 250μA, 5mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 5mA, 5V Alternative Parts (Cross-Reference): DTC115EEFRATL; RT1N151U; DTC115EE; Introduction Date: November 14, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTC115EE-7 - 1166997-DDTC115EE-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTC115EE-7
1166997-DDTC115EE-7
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTC115EE-7 1166997-DDTC115EE-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1166997-DDTC115EE-7 Packaging: Reel - TR Package: SOT-523 Mounting: SMD Power - Max: 150mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 250MHz Family Name: DDTC115EE Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k Categories: Discrete Semiconductor Products Manufacturer Homepage: www.diodes.com RoHS State: Request Verification Manufacturer Package: SOT-523 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 250μA, 5mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 5mA, 5V Alternative Parts (Cross-Reference): DTC115EEFRATL; RT1N151U; DTC115EE; Introduction Date: November 14, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1166997-DDTC115EE-7
Packaging: Reel - TR
Package: SOT-523
Mounting: SMD
Power - Max: 150mW
Transistor Type: NPN - Pre-Biased
Frequency - Transition: 250MHz
Family Name: DDTC115EE
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.diodes.com
RoHS State: Request Verification
Manufacturer Package: SOT-523
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 250μA, 5mA
Current - Collector Cutoff (Maximum): 500nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 5mA, 5V
Alternative Parts (Cross-Reference): DTC115EEFRATL; RT1N151U; DTC115EE;
Introduction Date: November 14, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
150MW Bipolar Transistor
292-DDTC115EE-7
150MW Bipolar Transistor 292-DDTC115EE-7
TRANS PREBIASED NPN 150MW SOT523 Product overview: DDTC115EE-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DDTC115EE-7 can be used for catalog matching and distributor lookup.

TRANS PREBIASED NPN 150MW SOT523 Product overview: DDTC115EE-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DDTC115EE-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DDTC115EE-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DDTC115EE-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DDTC115EE-7
TRANS PREBIASED NPN 150MW SOT523

TRANS PREBIASED NPN 150MW SOT523

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1166997-DDTC115EE-7 292-DDTC115EE-7 DDTC115EE-7
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTC115EE-7 150MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3 Cut Tape (CT)
Packing Method Tape Reel; Reel - TR Cut Tape (CT) Cut Tape (CT),Digi-ReelR
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