DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTA123EE-7 DDTA123EE-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 108162-DDTA123EE-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-523 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 20mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 108162-DDTA123EE-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-523 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 20mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTA123EE-7 - 108162-DDTA123EE-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTA123EE-7
108162-DDTA123EE-7
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTA123EE-7 108162-DDTA123EE-7
Manufacturer: Diodes Incorporated Win Source Part Number: 108162-DDTA123EE-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-523 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 20mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 108162-DDTA123EE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-523
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 20 @ 20mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 108162-DDTA123EE-7
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DDTA123EE-7
Polarity PNP; PNP - Pre-Biased
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