DIODES Incorporated Bipolar Transistor Arrays, Pre-Biased DDC143TH-7

Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - DDC143TH-7-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
DDC143TH-7-ND
Bipolar Transistor Arrays, Pre-Biased DDC143TH-7-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC143TH-7 - 013923-DDC143TH-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC143TH-7
013923-DDC143TH-7
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC143TH-7 013923-DDC143TH-7
Manufacturer: Diodes Incorporated Win Source Part Number: 013923-DDC143TH-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-563 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 2.5mA Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 013923-DDC143TH-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-563
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 2.5mA
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DDC143TH-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DDC143TH-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DDC143TH-7
TRANS 2NPN PREBIAS 0.15W SOT563

TRANS 2NPN PREBIAS 0.15W SOT563

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
DDC143TH-7
Bipolar Transistors - Pre-Biased DDC143TH-7
Bipolar Transistors - Pre-Biased 150MW 4.7K

Bipolar Transistors - Pre-Biased 150MW 4.7K

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DDC143TH-7-ND 013923-DDC143TH-7 DDC143TH-7 DDC143TH-7
Product Name Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC143TH-7 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - Pre-Biased
Polarity NPN NPN; 2 NPN - Pre-Biased (Dual)
Unlock Full Specs
to access all available technical data