DIODES Incorporated TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC123JU-7-F DDC123JU-7-F

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 013919-DDC123JU-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Family Name: DDC123JU Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 200mW Alternative Parts (Cross-Reference): UMH10NTN; UMH10N; KRC855U; Introduction Date: August 11, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 013919-DDC123JU-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Family Name: DDC123JU Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 200mW Alternative Parts (Cross-Reference): UMH10NTN; UMH10N; KRC855U; Introduction Date: August 11, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC123JU-7-F - 013919-DDC123JU-7-F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC123JU-7-F
013919-DDC123JU-7-F
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC123JU-7-F 013919-DDC123JU-7-F
Manufacturer: Diodes Incorporated Win Source Part Number: 013919-DDC123JU-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Family Name: DDC123JU Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 200mW Alternative Parts (Cross-Reference): UMH10NTN; UMH10N; KRC855U; Introduction Date: August 11, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 013919-DDC123JU-7-F
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Family Name: DDC123JU
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 200mW
Alternative Parts (Cross-Reference): UMH10NTN; UMH10N; KRC855U;
Introduction Date: August 11, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - DDC123JU-7-F - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
DDC123JU-7-F
Bipolar Transistor Arrays, Pre-Biased DDC123JU-7-F
TRANS 2NPN PREBIAS 0.2W SOT363

TRANS 2NPN PREBIAS 0.2W SOT363

Supplier's Site Datasheet
Singapore
0.2W Bipolar Transistor
293-DDC123JU-7-F
0.2W Bipolar Transistor 293-DDC123JU-7-F
TRANS 2NPN PREBIAS 0.2W SOT363 Product overview: DDC123JU-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DDC123JU-7-F can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.2W SOT363 Product overview: DDC123JU-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DDC123JU-7-F can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - DDC123JU-FDIDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
DDC123JU-FDIDKR-ND
Bipolar Transistor Arrays, Pre-Biased DDC123JU-FDIDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - DDC123JU-FDITR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
DDC123JU-FDITR-ND
Bipolar Transistor Arrays, Pre-Biased DDC123JU-FDITR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - DDC123JU-FDICT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
DDC123JU-FDICT-ND
Bipolar Transistor Arrays, Pre-Biased DDC123JU-FDICT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363

Buy Now Datasheet
Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant Diodes Inc. - 28AK8028 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant Diodes Inc.
28AK8028
Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant Diodes Inc. 28AK8028
RF TRANSISTOR, 50V, 0.1A, SOT-363 ROHS COMPLIANT: YES

RF TRANSISTOR, 50V, 0.1A, SOT-363 ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
DDC123JU-7-F
Bipolar Transistors - Pre-Biased DDC123JU-7-F
Bipolar Transistors - Pre-Biased DUAL NPN 200mW

Bipolar Transistors - Pre-Biased DUAL NPN 200mW

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DDC123JU-7-F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DDC123JU-7-F
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DDC123JU-7-F
TRANS 2NPN PREBIAS 0.2W SOT363

TRANS 2NPN PREBIAS 0.2W SOT363

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 013919-DDC123JU-7-F DDC123JU-7-F 293-DDC123JU-7-F DDC123JU-FDIDKR-ND 28AK8028 DDC123JU-7-F DDC123JU-7-F
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DDC123JU-7-F Bipolar Transistor Arrays, Pre-Biased 0.2W Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant Diodes Inc. Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual); NPN PNP NPN
Package Type SOT3; SOT-363 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 TO-3; SOT3
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
Operating Frequency 250 MHz
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