DIODES Incorporated Bipolar Transistor Arrays, Pre-Biased DCX114EH-7

Description
TRANS PREBIAS NPN/PNP SOT563
  • Bipolar Transistor Arrays, Pre-Biased - DCX114EH-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Bipolar Transistor Arrays, Pre-Biased - DCX114EH-7DITR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - DCX114EH-7DICT-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - DCX114EH-7DIDKR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DCX114EH-7 - 080375-DCX114EH-7 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DCX114EH-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
TRANS PREBIAS NPN/PNP SOT563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - DCX114EH-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
DCX114EH-7
Bipolar Transistor Arrays, Pre-Biased DCX114EH-7
TRANS PREBIAS NPN/PNP SOT563

TRANS PREBIAS NPN/PNP SOT563

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - DCX114EH-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
DCX114EH-7DITR-ND
Bipolar Transistor Arrays, Pre-Biased DCX114EH-7DITR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - DCX114EH-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
DCX114EH-7DICT-ND
Bipolar Transistor Arrays, Pre-Biased DCX114EH-7DICT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - DCX114EH-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
DCX114EH-7DIDKR-ND
Bipolar Transistor Arrays, Pre-Biased DCX114EH-7DIDKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-563

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DCX114EH-7 - 080375-DCX114EH-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DCX114EH-7
080375-DCX114EH-7
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DCX114EH-7 080375-DCX114EH-7
Manufacturer: Diodes Incorporated Win Source Part Number: 080375-DCX114EH-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-563 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 080375-DCX114EH-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-563
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DCX114EH-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DCX114EH-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DCX114EH-7
TRANS PREBIAS NPN/PNP SOT563

TRANS PREBIAS NPN/PNP SOT563

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
DCX114EH-7
Bipolar Transistors - Pre-Biased DCX114EH-7
Bipolar Transistors - Pre-Biased 150MW 10K

Bipolar Transistors - Pre-Biased 150MW 10K

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DCX114EH-7 DCX114EH-7DITR-ND 080375-DCX114EH-7 DCX114EH-7 DCX114EH-7
Product Name Bipolar Transistor Arrays, Pre-Biased Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DCX114EH-7 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - Pre-Biased
Polarity 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual)
Package Type SOT-563, SOT-666 SOT-563, SOT-666 SOT3; SOT-563
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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