DIODES Incorporated Single Bipolar Transistors DCP56-13

Description
Bipolar (BJT) Transistor NPN 80V 1A 200MHz 1W Surface Mount SOT-223-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 80V 1A 200MHz 1W Surface Mount SOT-223-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - DCP56DITR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DCP56DITR-ND
Single Bipolar Transistors DCP56DITR-ND
Bipolar (BJT) Transistor NPN 80V 1A 200MHz 1W Surface Mount SOT-223-3

Bipolar (BJT) Transistor NPN 80V 1A 200MHz 1W Surface Mount SOT-223-3

Buy Now Datasheet
Single Bipolar Transistors - DCP56-13 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DCP56-13
Single Bipolar Transistors DCP56-13
TRANS NPN 80V 1A SOT223-3

TRANS NPN 80V 1A SOT223-3

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - DCP56-13 - 1032719-DCP56-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DCP56-13
1032719-DCP56-13
TRANSISTORS - Transistors (BJT) - Single - DCP56-13 1032719-DCP56-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1032719-DCP56-13 Packaging: Cut Reel Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Automotive

Manufacturer: Diodes Incorporated
Win Source Part Number: 1032719-DCP56-13
Packaging: Cut Reel
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 150mA, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Automotive

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DCP56-13
Bipolar Transistors - BJT DCP56-13
Bipolar Transistors - BJT 1W 80V

Bipolar Transistors - BJT 1W 80V

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DCP56-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DCP56-13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DCP56-13
TRANS NPN 80V 1A SOT223-3

TRANS NPN 80V 1A SOT223-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DCP56DITR-ND DCP56-13 1032719-DCP56-13 DCP56-13 DCP56-13
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - DCP56-13 Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA SOT3; SOT-223
IC(max) 1000 milliamps 1000 milliamps
VCEO 80 volts 80 volts
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