MOSFET N-CH 50V 200MA SOT23-3
N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3
N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3
N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 012158-BSS138TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300mW (Ta)
Family Name: BSS138
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 220mA, 10V
Alternative Parts (Cross-Reference): BSS138-TP-HF; BSS138-TP; BSS138E6327;
Introduction Date: October 20, 1997
ECCN: EAR99
Country of Origin: China, Germany
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET N-CH 50V 200MA SOT23-3
MOSFET N-CH 50V 200MA SOT23-3
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS138TA | BSS138ZXDKR-ND | 012158-BSS138TA | BSS138TA | 233-BSS138TA |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138TA | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 50V 200MA SOT23-3 |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||
| V(BR)DSS | 50 volts | 50 volts | 50 volts | ||
| IDSS | 200 milliamps | ||||
| PD | 300 milliwatts | 300 milliwatts | 360 milliwatts |