DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138DW-7-F BSS138DW-7-F

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 012156-BSS138DW-7-F Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: BSS138DW Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 200mW Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 200mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 220mA, 10V Alternative Parts (Cross-Reference): UM6K33N; UM6K33NTN; UM6K34NTCN; Introduction Date: November 03, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 012156-BSS138DW-7-F Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: BSS138DW Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 200mW Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 200mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 220mA, 10V Alternative Parts (Cross-Reference): UM6K33N; UM6K33NTN; UM6K34NTCN; Introduction Date: November 03, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138DW-7-F - 012156-BSS138DW-7-F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138DW-7-F
012156-BSS138DW-7-F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138DW-7-F 012156-BSS138DW-7-F
Manufacturer: Diodes Incorporated Win Source Part Number: 012156-BSS138DW-7-F Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: BSS138DW Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 200mW Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 200mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 220mA, 10V Alternative Parts (Cross-Reference): UM6K33N; UM6K33NTN; UM6K34NTCN; Introduction Date: November 03, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 012156-BSS138DW-7-F
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: BSS138DW
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 200mW
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 200mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 220mA, 10V
Alternative Parts (Cross-Reference): UM6K33N; UM6K33NTN; UM6K34NTCN;
Introduction Date: November 03, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - BSS138DW-FDICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
BSS138DW-FDICT-ND
FET, MOSFET Arrays BSS138DW-FDICT-ND
Mosfet Array 2 N-Channel (Dual) 50V 200mA 200mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 50V 200mA 200mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - BSS138DW-FDIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
BSS138DW-FDIDKR-ND
FET, MOSFET Arrays BSS138DW-FDIDKR-ND
Mosfet Array 2 N-Channel (Dual) 50V 200mA 200mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 50V 200mA 200mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - BSS138DW-FDITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
BSS138DW-FDITR-ND
FET, MOSFET Arrays BSS138DW-FDITR-ND
Mosfet Array 2 N-Channel (Dual) 50V 200mA 200mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 50V 200mA 200mW Surface Mount SOT-363

Buy Now Datasheet
Singapore, Singapore
50V 0.2A MOSFET Transistor
289-BSS138DW-7-F
50V 0.2A MOSFET Transistor 289-BSS138DW-7-F
MOSFET 2N-CH 50V 0.2A SOT363 Product overview: BSS138DW-7-F from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 0.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSS138DW-7-F can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 50V 0.2A SOT363 Product overview: BSS138DW-7-F from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 0.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSS138DW-7-F can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - BSS138DW-7-F - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
BSS138DW-7-F
FET, MOSFET Arrays BSS138DW-7-F
MOSFET 2N-CH 50V 0.2A SC70-6

MOSFET 2N-CH 50V 0.2A SC70-6

Supplier's Site Datasheet
Mosfet, N Channel, Dual, 50V, 200Ma, Sot-363; Transistor Polarity Diodes Inc. - 25R4429 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, Dual, 50V, 200Ma, Sot-363; Transistor Polarity Diodes Inc.
25R4429
Mosfet, N Channel, Dual, 50V, 200Ma, Sot-363; Transistor Polarity Diodes Inc. 25R4429
MOSFET, N CHANNEL, DUAL, 50V, 200mA, SOT-363; Transistor Polarity:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:200mA; On Resistance Rds(on):3.5ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

MOSFET, N CHANNEL, DUAL, 50V, 200mA, SOT-363; Transistor Polarity:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:200mA; On Resistance Rds(on):3.5ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSS138DW-7-F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSS138DW-7-F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSS138DW-7-F
MOSFET 2N-CH 50V 0.2A SOT363

MOSFET 2N-CH 50V 0.2A SOT363

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
BSS138DW-7-F
Triode/MOS Tube/Transistor >> MOSFETs BSS138DW-7-F
50V 200mA 200mW 3.5Ω@10V,220mA 1.5V@250uA 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS

50V 200mA 200mW 3.5Ω@10V,220mA 1.5V@250uA 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 012156-BSS138DW-7-F BSS138DW-FDICT-ND 289-BSS138DW-7-F BSS138DW-7-F 25R4429 BSS138DW-7-F BSS138DW-7-F
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138DW-7-F FET, MOSFET Arrays 50V 0.2A MOSFET Transistor FET, MOSFET Arrays Mosfet, N Channel, Dual, 50V, 200Ma, Sot-363; Transistor Polarity Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
V(BR)DSS 50 volts 50 volts 50 volts 50 volts
PD 200 milliwatts 200 milliwatts 200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-363 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 TO-3; SOT3
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