DIODES Incorporated Single FETs, MOSFETs BSS123ATA

Description
N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet
Description
N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - BSS123ATR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSS123ATR-ND
Single FETs, MOSFETs BSS123ATR-ND
N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3

N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1049720-BSS123ATA - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1049720-BSS123ATA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1049720-BSS123ATA
Win Source Part Number: 1049720-BSS123ATA Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 360mW (Ta) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Diodes Incorporated Other Names: BSS123ACT,BSS123ADKR ,BSS123ACT-NDR,BSS12 3ATR-NDR,BSS123ATR Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1049720-BSS123ATA
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: BSS123ACT,BSS123ADKR,BSS123ACT-NDR,BSS123ATR-NDR,BSS123ATR
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSS123ATA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSS123ATA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSS123ATA
MOSFET N-CH 100V 170MA SOT23-3

MOSFET N-CH 100V 170MA SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSS123ATR-ND 1049720-BSS123ATA BSS123ATA
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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