DIODES Incorporated FETs - Single - BS870-7 BS870-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 752409-BS870-7 Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 300mW Popularity: Low Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 250mA Rds On (Maximum) at Id, Vgs: 5Ohm at 200mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 10V
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 752409-BS870-7 Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 300mW Popularity: Low Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 250mA Rds On (Maximum) at Id, Vgs: 5Ohm at 200mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - BS870-7 - 752409-BS870-7 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - BS870-7
752409-BS870-7
FETs - Single - BS870-7 752409-BS870-7
Manufacturer: Diodes Incorporated Win Source Part Number: 752409-BS870-7 Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 300mW Popularity: Low Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 250mA Rds On (Maximum) at Id, Vgs: 5Ohm at 200mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 10V

Manufacturer: Diodes Incorporated
Win Source Part Number: 752409-BS870-7
Packaging: Cut Tape (CT)
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 300mW
Popularity: Low
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 250mA
Rds On (Maximum) at Id, Vgs: 5Ohm at 200mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 10V

Buy Now
Single FETs, MOSFETs - BS870DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BS870DITR-ND
Single FETs, MOSFETs BS870DITR-ND
N-Channel 60V 250mA (Ta) 300mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 250mA (Ta) 300mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BS870-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BS870-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BS870-7
MOSFET N-CH 60V 250MA SOT23-3

MOSFET N-CH 60V 250MA SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 752409-BS870-7 BS870DITR-ND BS870-7
Product Name FETs - Single - BS870-7 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 300 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFR2405 - 1020749-AUIRFR2405 - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 55 volts
PD 110000 milliwatts
View Details
5 suppliers
GaAs Fet Switches - KCB828 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details