DIODES Incorporated Bipolar RF Transistors BFQ31ATA

Description
RF Transistor NPN 15V 100mA 600MHz 330mW Surface Mount SOT-23-3
  • Bipolar RF Transistors - BFQ31ATA-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - BFQ31ATA - 201164-BFQ31ATA - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFQ31ATA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
RF Transistor NPN 15V 100mA 600MHz 330mW Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Bipolar RF Transistors - BFQ31ATA-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFQ31ATA-ND
Bipolar RF Transistors BFQ31ATA-ND
RF Transistor NPN 15V 100mA 600MHz 330mW Surface Mount SOT-23-3

RF Transistor NPN 15V 100mA 600MHz 330mW Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - BFQ31ATA - 201164-BFQ31ATA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFQ31ATA
201164-BFQ31ATA
TRANSISTORS - RF Transistors (BJT) - BFQ31ATA 201164-BFQ31ATA
Manufacturer: Diodes Incorporated Win Source Part Number: 201164-BFQ31ATA Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 600MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 6dB @ 60MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 100 @ 3mA, 1V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 201164-BFQ31ATA
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 600MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 100 @ 3mA, 1V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFQ31ATA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFQ31ATA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFQ31ATA
RF TRANS NPN 15V 600MHZ SOT23-3

RF TRANS NPN 15V 600MHZ SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number BFQ31ATA-ND 201164-BFQ31ATA BFQ31ATA
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - BFQ31ATA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
TJ -55 to 150 C (-67 to 302 F)
Power Gain 100 dB
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