DIODES Incorporated TRANSISTORS - RF Transistors (BJT) - BCX70KTA BCX70KTA

Manufacturer: Diodes Incorporated
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1125123-BCX70KTA
Packaging: Tape & Reel (TR)
Current Rating: 200 mA
Length: 3.05 mm
Polarity: NPN
Height: 1 mm
Weight: 200.998119 mg
Gain Bandwidth Product: 250 MHz
Width: 1.4 mm
Categories: RF Transistors(BJT)
Case / Package: SOT-23
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Lead Free: Contains Lead
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Voltage Rating (DC): 45 V
Element Configuration: Single
Max Power Dissipation: 330 mW
Max Breakdown Voltage: 45 V
Max Operating Temperature: 150 °C
Collector Emitter Breakdown Voltage: 45 V
Collector Emitter Voltage (VCEO): 550 mV
Emitter Base Voltage (VEBO): 5 V
Max Collector Current: 200 mA
Transition Frequency: 180 MHz

Transistor NPN 45V SOT23-3 Product overview: BCX70KTA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BCX70KTA can be used for catalog matching and distributor lookup.