DIODES Incorporated Single Bipolar Transistors BC857CFHWQ-7

The BC857CFHWQ-7 is a PNP silicon bipolar junction transistor in a U-DFN1110-3 package, measuring 1.1 mm x 1.0 mm x 0.6 mm, designed for automotive applications requiring high reliability. It features a collector-emitter voltage rating of -45 V and a continuous collector current of -100 mA, with a power dissipation of 420 mW and thermal resistance from junction to ambient of 298 °C/W. The device is AEC-Q101 qualified, PPAP capable, RoHS compliant, and manufactured in IATF16949 certified facilities. It includes wettable flanks for automated optical inspection and operates over a junction temperature range of -55 °C to +150 °C.