DIODES Incorporated Single Bipolar Transistors BC857CFHW-7

PNP silicon transistor for switching and amplification, housed in a U-DFN1110-3/SWP (Type A) package measuring 1.1 mm × 1.0 mm with a height of 0.6 mm. Rated for a collector-emitter voltage of -45 V, continuous collector current of -100 mA, and peak pulse collector current of -200 mA. Power dissipation is 420 mW with a thermal resistance junction-to-ambient of 298 °C/W. Operating and storage temperature range is -55 °C to +150 °C. Compliant with RoHS 3 and is halogen- and antimony-free. ESD protection meets HBM Class 3A (4000 V) and CDM Class C3 (1000 V). Features wettable flanks and is rated for automotive applications under AEC-Q100/101/104/200 with PPAP capability and IATF 16949 manufacturing. Package molding compound meets UL 94V-0 flammability rating and moisture sensitivity level 1 per J-STD-020.