DIODES Incorporated Single Bipolar Transistors BC857BLP4Q-7B

The BC857BLP4Q is a PNP silicon transistor designed for small signal applications, offering a collector-emitter voltage rating of -45V, a maximum collector current of -100mA, and a power dissipation of 1W. It is housed in a U-DFN1006-3/SWP package measuring 1.0mm x 0.6mm x 0.4mm, which provides a compact footprint 13 times smaller than SOT23 and minimizes off-board height. The device features sidewall tin plating for wettable flanks, supports reflow soldering per MIL-STD-202, and is rated for operation from -55°C to +150°C. It meets AEC-Q101 qualification for automotive use, is RoHS compliant, and certified under UL 94 V-0 for flammability. The part is suited for applications requiring high reliability in space-constrained designs.