DIODES Incorporated Single Bipolar Transistors BC857BLP4Q-7

The BC857BLP4Q-7 is a PNP silicon transistor rated for -45V collector-emitter voltage and -100mA continuous collector current, packaged in the U-DFN1006-3/SWP surface-mount case with a 0.6mm² footprint and 0.4mm height. It dissipates up to 1W with minimal copper area and has a junction-to-ambient thermal resistance of 490°C/W. The device is AEC-Q101 qualified, RoHS compliant, and suitable for automotive applications, with wettable flanks for automated optical inspection. The package features a molded plastic case rated UL 94V-0 and meets J-STD-020 Level 1 moisture sensitivity. ESD survival exceeds 4000V HBM per JEDEC JS-001.