DIODES Incorporated Single Bipolar Transistors BC857AFHW-7

PNP silicon transistor for switching and amplification in a U-DFN1110-3/SWP (Type A) package, 0.6 mm high, with a continuous collector current of -100 mA, collector-emitter voltage of -45 V, and power dissipation of 420 mW. Thermal resistance from junction to ambient is 298°C/W. The device is lead-free, RoHS compliant, and rated for operating and storage temperatures from -55°C to +150°C. Features wettable flanks for AOI and meets ESD HBM Class 3A and CDM C3 standards.