DIODES Incorporated Single Bipolar Transistors BC856BFHW-7

The BC856BFHW-7 is a PNP bipolar junction transistor in a U-DFN1110-3/SWP package, measuring 1.10 mm by 1.00 mm with a height of 0.6 mm, designed for switching and amplification in compact applications. It has a collector-emitter voltage rating of -65 V and a continuous collector current of -100 mA. The device features wettable flanks for automated optical inspection, is lead-free and RoHS compliant, and meets UL 94 V-0 flammability rating. Its thermal resistance is 298 °C/W, with an operating temperature range of -55 °C to +150 °C. The transistor is ESD hardened to HBM 4000 V and CDM 1000 V, and is packaged in a 5,000-piece reel.