DIODES Incorporated Single Bipolar Transistors BC856AFHWQ-7

The BC856AFHWQ-7 is a PNP bipolar junction transistor in a U-DFN1110-3 package, measuring 1.10 mm by 1.00 mm with a height of 0.52 mm, designed for automotive switching and amplification applications. It has a collector-emitter voltage rating of -65 V, a continuous collector current of -100 mA, and a power dissipation of 420 mW. The device is AEC-Q101 qualified, RoHS compliant, and features wettable flanks for automated optical inspection. Operating and storage temperatures range from -55°C to +150°C. The package is molded in a UL 94 V-0 rated green material with matte tin plating and is moisture sensitive at level 1 per J-STD-020.