DIODES Incorporated Single Bipolar Transistors BC847BLP4-7

Description
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount X2-DFN1006-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount X2-DFN1006-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC847BLP4DITR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC847BLP4DITR-ND
Single Bipolar Transistors BC847BLP4DITR-ND
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount X2-DFN1006-3

Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount X2-DFN1006-3

Buy Now Datasheet
Single Bipolar Transistors - BC847BLP4-7 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BC847BLP4-7
Single Bipolar Transistors BC847BLP4-7
TRANS NPN 45V 0.1A 3DFN

TRANS NPN 45V 0.1A 3DFN

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC847BLP4-7 - 011109-BC847BLP4-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC847BLP4-7
011109-BC847BLP4-7
TRANSISTORS - Transistors (BJT) - Single - BC847BLP4-7 011109-BC847BLP4-7
Manufacturer: Diodes Incorporated Win Source Part Number: 011109-BC847BLP4-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 011109-BC847BLP4-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC847BLP4-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC847BLP4-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC847BLP4-7
TRANS NPN 45V 0.1A 3DFN

TRANS NPN 45V 0.1A 3DFN

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC847BLP4-7
Bipolar Transistors - BJT BC847BLP4-7
Bipolar Transistors - BJT 250mW 45V

Bipolar Transistors - BJT 250mW 45V

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC847BLP4DITR-ND BC847BLP4-7 011109-BC847BLP4-7 BC847BLP4-7 BC847BLP4-7
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC847BLP4-7 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN NPN; NPN
Package Type 3-XFDFN 3-XFDFN SOT3; X2-DFN1006-3
IC(max) 100 milliamps 100 milliamps
VCEO 45 volts 45 volts
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