Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 410mW Surface Mount X2-DFN1006-3
Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 410mW Surface Mount X2-DFN1006-3
Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 410mW Surface Mount X2-DFN1006-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 079559-BC846BLP4-7B
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 410mW
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
TRANS NPN 65V 0.1A 3DFN
TRANS NPN 65V 0.1A 3DFN Product overview: BC846BLP4-7B from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC846BLP4-7B can be used for catalog matching and distributor lookup.
TRANS NPN 65V 0.1A 3DFN
TRANS, NPN, 65V, 0.1A, 150DEG C, 0.46W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:300MHz; Power Dissipation Pd:460mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor RoHS Compliant: Yes
TRANS, NPN, 65V, 0.1A, 150DEG C, 0.46W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:300MHz; Power Dissipation Pd:460mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | BC846BLP4-7BDIDKR-ND | 079559-BC846BLP4-7B | BC846BLP4-7B | 276-BC846BLP4-7B | BC846BLP4-7B | 07AH3621 |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BC846BLP4-7B | Single Bipolar Transistors | 65V 0.1A Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans, Npn, 65V, 0.1A, 150Deg C, 0.46W; Transistor Polarity Diodes Inc. |
| Polarity | NPN | NPN; NPN | NPN; NPN | NPN | NPN | |
| Package Type | 3-XFDFN | SOT3; X2-DFN1006-3 | 3-XFDFN | Tape & Reel (TR) | X2-DFN1006-3 | TO-3 |
| IC(max) | 100 milliamps | 200 milliamps | 100 milliamps | |||
| VCEO | 65 volts | 65 volts | 65 volts | |||
| Operating Frequency | 300 MHz |
