DIODES Incorporated Single Bipolar Transistors BC817-16FHWQ-7

The BC817-16FHWQ-7 is a 45V NPN silicon bipolar junction transistor in a U-DFN1110-3/SWP package, measuring 1.10mm x 1.00mm x 0.52mm high, designed for automotive switching and amplification applications. It supports a continuous collector current of 500mA and a peak pulse current of 1A, with a collector-emitter breakdown voltage of 45V and a maximum power dissipation of 460mW. The device features a thermal resistance of 272°C/W from junction to ambient, a DC current gain (hFE) minimum of 100 at 100mA, and a collector-emitter saturation voltage of 700mV maximum at 500mA collector current and 50mA base current. It is AEC-Q101 qualified, RoHS compliant, lead-free, halogen-free, and rated for operation from -55°C to +150°C. The package has wettable flanks for automated optical inspection and is molded in UL 94 V-0 compliant material with moisture sensitivity level 1.