Manufacturer: Diodes Incorporated
Win Source Part Number: 010912-BAS40TW-7-F
Packaging: Reel - TR
Mounting: SMD (SMT)
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Operating Temperature - Junction: -55°C to 125°C
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Family Name: BAS40TW-7-F
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-363
Introduction Date: March 01, 2012
ECCN: EAR99
Estimated EOL Date: 2023
Halogen Free: Unknown
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
DIODE ARRAY SCHOTTKY 40V SOT363
Diode Array 3 Independent Schottky 40V 200mA (DC) Surface Mount 6-TSSOP, SC-88, SOT-363
Diode Array 3 Independent Schottky 40V 200mA (DC) Surface Mount 6-TSSOP, SC-88, SOT-363
Diode Array 3 Independent Schottky 40V 200mA (DC) Surface Mount 6-TSSOP, SC-88, SOT-363
DIODE ARR SCHOT 40V 200MA SOT363
SCHOTTKY DIODE, 40mA, 40V, SOT-363; Diode Configuration:Triple
Schottky Diodes & Rectifiers 40V 200mW
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Diode Arrays | Diode Arrays | Diode Arrays | Rectifiers | Schottky Diodes | Schottky Diodes |
| Product Number | 010912-BAS40TW-7-F | BAS40TW-7-F | BAS40TW-FDICT-ND | BAS40TW-7-F | 51R6383 | BAS40TW-7-F |
| Product Name | Diodes, Rectifiers - Arrays - BAS40TW-7-F | Diode Arrays | Diode Arrays | Discrete Semiconductor Products - Diodes - Rectifiers | Schottky Diode, 40Ma, 40V, Sot-363; Diode Configuration Diodes Inc. | Schottky Diodes & Rectifiers |
| Diode Type | Schottky; Schottky | Schottky | ||||
| Life Cycle Stage | Active | Active | ||||
| VF | 1 volts | 1 volts | 1 volts | 1 volts | ||
| VR | 40 volts | 40 volts | ||||
| IR | 2.00E-4 mA | 2.00E-4 mA |