DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - APT27ZTR-G1 APT27ZTR-G1

Manufacturer: Diodes Incorporated
Win Source Part Number: 118914-APT27ZTR-G1
Packaging: AMMO PACKAGE
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 500mV @ 40mA, 200mA
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 6 @ 300mA, 10V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Bipolar (BJT) Transistor NPN 450V 800mA 800mW Through Hole TO-92

TRANS NPN 450V 0.8A TO92 Product overview: APT27ZTR-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 0.8A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 0.8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT27ZTR-G1 can be used for catalog matching and distributor lookup.