DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - APT13005TF-G1 APT13005TF-G1

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 051819-APT13005TF-G1 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 900mV @ 1A, 4A Typical Gain (hFE) (Min): 8 @ 2A, 5V Maximum Power Dissipation: 28W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 051819-APT13005TF-G1 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 900mV @ 1A, 4A Typical Gain (hFE) (Min): 8 @ 2A, 5V Maximum Power Dissipation: 28W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - APT13005TF-G1 - 051819-APT13005TF-G1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - APT13005TF-G1
051819-APT13005TF-G1
TRANSISTORS - Transistors (BJT) - Single - APT13005TF-G1 051819-APT13005TF-G1
Manufacturer: Diodes Incorporated Win Source Part Number: 051819-APT13005TF-G1 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 900mV @ 1A, 4A Typical Gain (hFE) (Min): 8 @ 2A, 5V Maximum Power Dissipation: 28W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 051819-APT13005TF-G1
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 900mV @ 1A, 4A
Typical Gain (hFE) (Min): 8 @ 2A, 5V
Maximum Power Dissipation: 28W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
450V 4A TO220 Bipolar Transistor
276-APT13005TF-G1
450V 4A TO220 Bipolar Transistor 276-APT13005TF-G1
TRANS NPN 450V 4A TO220-3 Product overview: APT13005TF-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005TF-G1 can be used for catalog matching and distributor lookup.

TRANS NPN 450V 4A TO220-3 Product overview: APT13005TF-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005TF-G1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - APT13005TF-G1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
APT13005TF-G1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) APT13005TF-G1
TRANS NPN 450V 4A TO220-3

TRANS NPN 450V 4A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
APT13005TF-G1
Bipolar Transistors - BJT APT13005TF-G1
Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A

Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 051819-APT13005TF-G1 276-APT13005TF-G1 APT13005TF-G1 APT13005TF-G1
Product Name TRANSISTORS - Transistors (BJT) - Single - APT13005TF-G1 450V 4A TO220 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN; NPN
Package Type TO-220; SOT3; TO-220-3 Tube
Packing Method Tube Tube; Tube
IC(max) 4000 milliamps 4000 milliamps
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