DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1 APT13005T-G1

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 804021-APT13005T-G1 Packaging: Tube Mounting Style: Through Hole Power - Max: 75W Transistor Type: NPN Frequency - Transition: 4MHz Supplier Device Package: TO-220AB Temperature Range - Operating: -65°C ~ 150°C Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 450V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 900mV at 1A, 4A DC Current Gain (hFE) (Min) at Ic, Vce: 8 at 2A, 5V
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 804021-APT13005T-G1 Packaging: Tube Mounting Style: Through Hole Power - Max: 75W Transistor Type: NPN Frequency - Transition: 4MHz Supplier Device Package: TO-220AB Temperature Range - Operating: -65°C ~ 150°C Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 450V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 900mV at 1A, 4A DC Current Gain (hFE) (Min) at Ic, Vce: 8 at 2A, 5V
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1 - 804021-APT13005T-G1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1
804021-APT13005T-G1
TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1 804021-APT13005T-G1
Manufacturer: Diodes Incorporated Win Source Part Number: 804021-APT13005T-G1 Packaging: Tube Mounting Style: Through Hole Power - Max: 75W Transistor Type: NPN Frequency - Transition: 4MHz Supplier Device Package: TO-220AB Temperature Range - Operating: -65°C ~ 150°C Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 450V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 900mV at 1A, 4A DC Current Gain (hFE) (Min) at Ic, Vce: 8 at 2A, 5V

Manufacturer: Diodes Incorporated
Win Source Part Number: 804021-APT13005T-G1
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 75W
Transistor Type: NPN
Frequency - Transition: 4MHz
Supplier Device Package: TO-220AB
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 450V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 900mV at 1A, 4A
DC Current Gain (hFE) (Min) at Ic, Vce: 8 at 2A, 5V

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - APT13005T-G1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
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Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 804021-APT13005T-G1 APT13005T-G1 APT13005T-G1
Product Name TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1 Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type TO-220; SOT3
Packing Method Tube; Tube Tube; Tube
TJ -65 to 150 C (-85 to 302 F)
Power Gain 8 dB
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