DIODES Incorporated 450V 4A TO220 Bipolar Transistor APT13005T-G1

Description
TRANS NPN 450V 4A TO220-3 Product overview: APT13005T-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005T-G1 can be used for catalog matching and distributor lookup.
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Description
TRANS NPN 450V 4A TO220-3 Product overview: APT13005T-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005T-G1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
450V 4A TO220 Bipolar Transistor
276-APT13005T-G1
450V 4A TO220 Bipolar Transistor 276-APT13005T-G1
TRANS NPN 450V 4A TO220-3 Product overview: APT13005T-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005T-G1 can be used for catalog matching and distributor lookup.

TRANS NPN 450V 4A TO220-3 Product overview: APT13005T-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005T-G1 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1 - 804021-APT13005T-G1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1
804021-APT13005T-G1
TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1 804021-APT13005T-G1
Manufacturer: Diodes Incorporated Win Source Part Number: 804021-APT13005T-G1 Packaging: Tube Mounting Style: Through Hole Power - Max: 75W Transistor Type: NPN Frequency - Transition: 4MHz Supplier Device Package: TO-220AB Temperature Range - Operating: -65°C ~ 150°C Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 450V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 900mV at 1A, 4A DC Current Gain (hFE) (Min) at Ic, Vce: 8 at 2A, 5V

Manufacturer: Diodes Incorporated
Win Source Part Number: 804021-APT13005T-G1
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 75W
Transistor Type: NPN
Frequency - Transition: 4MHz
Supplier Device Package: TO-220AB
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 450V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 900mV at 1A, 4A
DC Current Gain (hFE) (Min) at Ic, Vce: 8 at 2A, 5V

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - APT13005T-G1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
APT13005T-G1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) APT13005T-G1
TRANS NPN 450V 4A TO220-3

TRANS NPN 450V 4A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
APT13005T-G1
Bipolar Transistors - BJT APT13005T-G1
Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A

Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 276-APT13005T-G1 804021-APT13005T-G1 APT13005T-G1 APT13005T-G1
Product Name 450V 4A TO220 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - APT13005T-G1 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Package Type Tube TO-220; SOT3
Packing Method Tube Tube; Tube Tube; Tube
VCEO 450 volts 450 volts
TJ -65 to 150 C (-85 to 302 F) -65 to 150 C (-85 to 302 F)
Polarity NPN
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