DIODES Incorporated Single Bipolar Transistors APT13005STF-G1

Description
Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 28W Through Hole ITO-220AB
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 28W Through Hole ITO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - APT13005STF-G1DI-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
APT13005STF-G1DI-ND
Single Bipolar Transistors APT13005STF-G1DI-ND
Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 28W Through Hole ITO-220AB

Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 28W Through Hole ITO-220AB

Buy Now Datasheet
Singapore
450V 3.2A Bipolar Transistor
276-APT13005STF-G1
450V 3.2A Bipolar Transistor 276-APT13005STF-G1
TRANS NPN 450V 3.2A ITO220AB Product overview: APT13005STF-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 3.2A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 3.2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005STF-G1 can be used for catalog matching and distributor lookup.

TRANS NPN 450V 3.2A ITO220AB Product overview: APT13005STF-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 3.2A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 3.2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005STF-G1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - APT13005STF-G1 - 1146617-APT13005STF-G1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - APT13005STF-G1
1146617-APT13005STF-G1
TRANSISTORS - Transistors (BJT) - Single - APT13005STF-G1 1146617-APT13005STF-G1
Manufacturer: Diodes Incorporated Win Source Part Number: 1146617-APT13005STF- G1 Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F-3 Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.bcdsemi.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Current - Collector (Ic) (Maximum): 3.2A Voltage - Collector Emitter Breakdown (Maximum): 450V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 750mA, 3A DC Current Gain (hFE) (Minimum) at Ic, Vce: 8 at 2A, 5V Maximum Power: 28W

Manufacturer: Diodes Incorporated
Win Source Part Number: 1146617-APT13005STF-G1
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 4MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220F-3
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.bcdsemi.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Current - Collector (Ic) (Maximum): 3.2A
Voltage - Collector Emitter Breakdown (Maximum): 450V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 750mA, 3A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 8 at 2A, 5V
Maximum Power: 28W

Buy Now
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
APT13005STF-G1
Bipolar Transistors - BJT APT13005STF-G1
Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 28W

Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 28W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - APT13005STF-G1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
APT13005STF-G1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) APT13005STF-G1
TRANS NPN 450V 3.2A ITO220AB

TRANS NPN 450V 3.2A ITO220AB

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number APT13005STF-G1DI-ND 276-APT13005STF-G1 1146617-APT13005STF-G1 APT13005STF-G1 APT13005STF-G1
Product Name Single Bipolar Transistors 450V 3.2A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - APT13005STF-G1 Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab Tube TO-220; SOT3
Packing Method Tube Tube; Tube Tube; Tube
VCEO 450 volts
TJ -65 to 150 C (-85 to 302 F) -65 to 150 C (-85 to 302 F)
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