DIODES Incorporated Single Bipolar Transistors APT13005SI-G1

Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 25W Through Hole TO-251

Manufacturer: Diodes Incorporated
Win Source Part Number: 051818-APT13005SI-G1
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-251
Maximum Current Collector: 3.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 1V @ 750mA, 3A
Typical Gain (hFE) (Min): 8 @ 2A, 5V
Maximum Power Dissipation: 25W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

TRANS NPN 450V 3.2A TO251 Product overview: APT13005SI-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 3.2A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 3.2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005SI-G1 can be used for catalog matching and distributor lookup.