DIODES Incorporated Single Bipolar Transistors APT13005SI-G1

Description
Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 25W Through Hole TO-251
  • Single Bipolar Transistors - APT13005SI-G1DI-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - APT13005SI-G1 - 051818-APT13005SI-G1 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - APT13005SI-G1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 25W Through Hole TO-251
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - APT13005SI-G1DI-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
APT13005SI-G1DI-ND
Single Bipolar Transistors APT13005SI-G1DI-ND
Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 25W Through Hole TO-251

Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 25W Through Hole TO-251

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - APT13005SI-G1 - 051818-APT13005SI-G1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - APT13005SI-G1
051818-APT13005SI-G1
TRANSISTORS - Transistors (BJT) - Single - APT13005SI-G1 051818-APT13005SI-G1
Manufacturer: Diodes Incorporated Win Source Part Number: 051818-APT13005SI-G1 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-251 Maximum Current Collector: 3.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 1V @ 750mA, 3A Typical Gain (hFE) (Min): 8 @ 2A, 5V Maximum Power Dissipation: 25W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 051818-APT13005SI-G1
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-251
Maximum Current Collector: 3.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 1V @ 750mA, 3A
Typical Gain (hFE) (Min): 8 @ 2A, 5V
Maximum Power Dissipation: 25W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
APT13005SI-G1
Bipolar Transistors - BJT APT13005SI-G1
Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A

Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - APT13005SI-G1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
APT13005SI-G1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) APT13005SI-G1
TRANS NPN 450V 3.2A TO251

TRANS NPN 450V 3.2A TO251

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number APT13005SI-G1DI-ND 051818-APT13005SI-G1 APT13005SI-G1 APT13005SI-G1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - APT13005SI-G1 Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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