DIODES Incorporated 450V 4A TO220 Bipolar Transistor APT13005DT-G1

Description
TRANS NPN 450V 4A TO220-3 Product overview: APT13005DT-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005DT-G1 can be used for catalog matching and distributor lookup.
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Description
TRANS NPN 450V 4A TO220-3 Product overview: APT13005DT-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005DT-G1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
450V 4A TO220 Bipolar Transistor
276-APT13005DT-G1
450V 4A TO220 Bipolar Transistor 276-APT13005DT-G1
TRANS NPN 450V 4A TO220-3 Product overview: APT13005DT-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005DT-G1 can be used for catalog matching and distributor lookup.

TRANS NPN 450V 4A TO220-3 Product overview: APT13005DT-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 4A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 4A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13005DT-G1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1045805-APT13005DT-G1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1045805-APT13005DT-G1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1045805-APT13005DT-G1
Win Source Part Number: 1045805-APT13005DT-G 1 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1,000 Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 450 V Current - Collector (Ic) (Max): 4 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 900mV @ 1A, 4A DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Frequency - Transition: 4MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Temperature Range - Operating: -65°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): KSC2073TU; FJPF3305H1TU; FJPF3305H2TU; FJPF3305TU; FJP3305TU; BUJD203A,127; PHE13005,127; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Other Names: APT13005DT-G1-ND,APT 13005DT-G1DI Base Product Number: APT13005 Product Status: Obsolete

Win Source Part Number: 1045805-APT13005DT-G1
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 1,000
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 900mV @ 1A, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): KSC2073TU; FJPF3305H1TU; FJPF3305H2TU; FJPF3305TU; FJP3305TU; BUJD203A,127; PHE13005,127;
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: APT13005DT-G1-ND,APT13005DT-G1DI
Base Product Number: APT13005
Product Status: Obsolete

Buy Now Datasheet
Single Bipolar Transistors - APT13005DT-G1DI-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
APT13005DT-G1DI-ND
Single Bipolar Transistors APT13005DT-G1DI-ND
Bipolar (BJT) Transistor NPN 450V 4A 4MHz 75W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 450V 4A 4MHz 75W Through Hole TO-220-3

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
APT13005DT-G1
Bipolar Transistors - BJT APT13005DT-G1
Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo

Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - APT13005DT-G1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
APT13005DT-G1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) APT13005DT-G1
TRANS NPN 450V 4A TO220-3

TRANS NPN 450V 4A TO220-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 276-APT13005DT-G1 1045805-APT13005DT-G1 APT13005DT-G1DI-ND APT13005DT-G1 APT13005DT-G1
Product Name 450V 4A TO220 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type Box TO-220; SOT3 TO-220; TO-220-3
Packing Method Box Box
VCEO 450 volts 450 volts
TJ -65 to 150 C (-85 to 302 F) -65 to 150 C (-85 to 302 F)
Polarity NPN NPN
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