DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - APT13003LZTR-G1 APT13003LZTR-G1

Manufacturer: Diodes Incorporated
Win Source Part Number: 800627-APT13003LZTR-G1
Packaging: Tape & Box (TB)
Mounting Style: Through Hole
Power - Max: 800mW
Transistor Type: NPN
Supplier Device Package: TO-92
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Maximum): 800mA
Voltage - Collector Emitter Breakdown (Maximum): 450V
Popularity: High
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 40mA, 200mA
DC Current Gain (hFE) (Min) at Ic, Vce: 6 at 300mA, 10V

TRANS NPN 450V 0.8A TO92 Product overview: APT13003LZTR-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 0.8A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 0.8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13003LZTR-G1 can be used for catalog matching and distributor lookup.