DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - APT13003DZTR-G1 APT13003DZTR-G1

Manufacturer: Diodes Incorporated
Win Source Part Number: 1146613-APT13003DZTR-G1
Packaging: Cut Tape (CT)
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 4MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.bcdsemi.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Maximum): 1.5A
Voltage - Collector Emitter Breakdown (Maximum): 450V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 400mV at 250mA, 1A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 5 at 1A, 2V
Maximum Power: 1.1W

TRANS NPN 450V 1.5A TO92 Product overview: APT13003DZTR-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13003DZTR-G1 can be used for catalog matching and distributor lookup.