DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - APT13003DZTR-G1 APT13003DZTR-G1

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1146613-APT13003DZTR -G1 Packaging: Cut Tape (CT) Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.bcdsemi.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Current - Collector (Ic) (Maximum): 1.5A Voltage - Collector Emitter Breakdown (Maximum): 450V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 400mV at 250mA, 1A DC Current Gain (hFE) (Minimum) at Ic, Vce: 5 at 1A, 2V Maximum Power: 1.1W
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1146613-APT13003DZTR -G1 Packaging: Cut Tape (CT) Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.bcdsemi.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Current - Collector (Ic) (Maximum): 1.5A Voltage - Collector Emitter Breakdown (Maximum): 450V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 400mV at 250mA, 1A DC Current Gain (hFE) (Minimum) at Ic, Vce: 5 at 1A, 2V Maximum Power: 1.1W
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - APT13003DZTR-G1 - 1146613-APT13003DZTR-G1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - APT13003DZTR-G1
1146613-APT13003DZTR-G1
TRANSISTORS - Transistors (BJT) - Single - APT13003DZTR-G1 1146613-APT13003DZTR-G1
Manufacturer: Diodes Incorporated Win Source Part Number: 1146613-APT13003DZTR -G1 Packaging: Cut Tape (CT) Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.bcdsemi.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Current - Collector (Ic) (Maximum): 1.5A Voltage - Collector Emitter Breakdown (Maximum): 450V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 400mV at 250mA, 1A DC Current Gain (hFE) (Minimum) at Ic, Vce: 5 at 1A, 2V Maximum Power: 1.1W

Manufacturer: Diodes Incorporated
Win Source Part Number: 1146613-APT13003DZTR-G1
Packaging: Cut Tape (CT)
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 4MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.bcdsemi.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Maximum): 1.5A
Voltage - Collector Emitter Breakdown (Maximum): 450V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 400mV at 250mA, 1A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 5 at 1A, 2V
Maximum Power: 1.1W

Buy Now
Singapore, Singapore
450V 1.5A Bipolar Transistor
276-APT13003DZTR-G1
450V 1.5A Bipolar Transistor 276-APT13003DZTR-G1
TRANS NPN 450V 1.5A TO92 Product overview: APT13003DZTR-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13003DZTR-G1 can be used for catalog matching and distributor lookup.

TRANS NPN 450V 1.5A TO92 Product overview: APT13003DZTR-G1 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-APT13003DZTR-G1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANS NPN 450V 1.5A TO92 - 233-APT13003DZTR-G1 - Utmel Electronic Limited
Hong Kong, China
TRANS NPN 450V 1.5A TO92
233-APT13003DZTR-G1
TRANS NPN 450V 1.5A TO92 233-APT13003DZTR-G1
TRANS NPN 450V 1.5A TO92

TRANS NPN 450V 1.5A TO92

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - APT13003DZTR-G1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
APT13003DZTR-G1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) APT13003DZTR-G1
TRANS NPN 450V 1.5A TO92

TRANS NPN 450V 1.5A TO92

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
APT13003DZTR-G1
Bipolar Transistors - BJT APT13003DZTR-G1
Bipolar Transistors - BJT 250V NPN High Volt 700Vces 450Vceo 1.1W

Bipolar Transistors - BJT 250V NPN High Volt 700Vces 450Vceo 1.1W

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1146613-APT13003DZTR-G1 276-APT13003DZTR-G1 233-APT13003DZTR-G1 APT13003DZTR-G1 APT13003DZTR-G1
Product Name TRANSISTORS - Transistors (BJT) - Single - APT13003DZTR-G1 450V 1.5A Bipolar Transistor TRANS NPN 450V 1.5A TO92 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN
Package Type TO-92; SOT3 Cut Tape (CT)
Packing Method Tape Reel; Cut Tape (CT) Cut Tape (CT) Tape Reel; Cut Tape (CT),Tape & Box (TB)
TJ -65 to 150 C (-85 to 302 F) -65 to 150 C (-85 to 302 F)
Power Gain 5 dB
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